Temperature dependence of bistable InGaAsP/InP lasers

Journal Article · Mon Sep 01 04:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States)

OSTI ID:5261278

Liu, H F; Kamiya, T; Du, B X

An increase of hysteresis current width in bistable lasers with two to three sections was observed at higher temperatures. A rate equation analysis was performed where both carrier density dependence on lifetime and the bleaching of saturable absorption by the spontaneous emission were taken into account. The authors show that the increased loss of injection carriers due to Auger recombination process causes the increase in the hysteresis width. A small-signal stability analysis for the switch-off point revealed that increased coupling between carriers in the gain and absorption regions, through the absorption of superradiant emission, has the effect of raising the switch-off point to higher current levels. It was shown experimentally that, without changing the temperature, the current hysteresis width can be controlled by adjusting the current distribution in three sections.

• Research Organization: Dept. of Electronic Engineering, Univ. of Tokyo, Tokyo
• OSTI ID: 5261278
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-22:9; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
AUGER EFFECT
CARRIER DENSITY
COUPLING
EMISSION
ENERGY-LEVEL TRANSITIONS
EQUATIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HYSTERESIS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIFETIME
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIGNALS
STABILITY
STIMULATED EMISSION
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS