Switching characteristics and maximum repetitive frequency of InGaAsP/InP bistable injection lasers

Journal Article · Fri Jan 01 04:00:00 EST 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.92· OSTI ID:5020617

Liu, H F; Hashimoto, Y; Kamiya, T

Switching characteristics of nonuniformly pumped InGaAsP/InP BH Structure bistable lasers are investigated both experimentally and theoretically. First observation of automatic turn-on phenomenon was made, which is found to be a random process. For repetitive operation, turn-on delay time and necessary duration of switch-off pulse practically limited the maximum repetitive frequency. For ''switch-on,'' triggering the saturable absorption region is more effective. For reducing the minimum switch-off pulse width, either higher doping or reverse biasing at the absorption region is recommended. Tradeoff relation of OFF pulse width with threshold current and stable operation are discussed. With some improvements in device parameters, bistable operation at repetitive frequency over 1 GHz is expected.

• Research Organization: Dept. of Electronic Engineering, Univ. of Tokyo, Tokyo (JP)
• OSTI ID: 5020617
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-24:1; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
FREQUENCY RANGE
GALLIUM COMPOUNDS
GHZ RANGE
GHZ RANGE 01-100
HETEROJUNCTIONS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
OPERATION
PHOSPHORUS COMPOUNDS
PULSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STIMULATED EMISSION
THRESHOLD ENERGY