Effect of device parameters on bistable semiconductor laser

Journal Article · Tue Jul 15 04:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337443· OSTI ID:5628515

Hori, Y; Sato, H; Serizawa, H; Kajiwara, T

The effect of device parameters on static and dynamic properties of inhomogeneously current-injected bistable semiconductor lasers has been analyzed. It is shown that in addition to the fraction of current injection region in the cavity, the device parameters, such as dopant concentration in active layer, facet reflectivity, and cavity length, affect the hysteresis width and threshold current. The mechanism of transition between lasing and nonlasing states is discussed, in which a new interpretation is given about the bias dependence of switch-on delay time and the driving condition for switching off is clarified. The carrier increasing rates due to the bias current and dopant concentration in the active layer are dominant factors for the switching on and switching off, respectively.

• Research Organization: Opto-Electronics Laboratory, Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd., 3-15 Yagumonakamachi, Moriguchi-shi, Osaka 570, Japan
• OSTI ID: 5628515
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:2; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CHARGE CARRIERS
CRYSTAL DOPING
CURRENTS
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
EQUIPMENT
HYSTERESIS
LASER CAVITIES
LASERS
OPTICAL PROPERTIES
PERFORMANCE
PHYSICAL PROPERTIES
REFLECTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SURFACE PROPERTIES
SWITCHES
THRESHOLD CURRENT