Low threshold current GaInAsP/InP DFB lasers

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073437· OSTI ID:6410058

Itaya, Y; Saito, H; Motosugi, G; Tohmori, Y

Low threshold current GaInAsP/InP distributed feedback lasers emitting at 1.55 ..mu..m were investigated experimentally and theoretically. A low threshold current as low as 5.7 mA was obtained in anti-reflection/high-reflection coated DFB lasers with a short cavity and submicron width of the active layer. The differential efficiency was as high as 0.44 W/A. The stable single longitudinal mode operation was obtained over a wide range of driving current and under high-speed direct modulation whereas a product of coupling coefficient and laser length L was kept around 1. The lowest threshold current of 5 mA was obtained around L = 100 ..mu..m under pulsed operation.

• Research Organization: NTT Electrical Communications Labs., Atsugi-shi, Kanagawa 243-01
• OSTI ID: 6410058
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
COUPLING
CURRENTS
DESIGN
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER CAVITIES
LASER RADIATION
LASERS
LAYERS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
THRESHOLD CURRENT
WAVELENGTHS