Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers

Journal Article · Sat Feb 28 23:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92366· OSTI ID:6569663

Chen, P C; Yu, K L; Margalit, S; Yariv, A

Single-growth liquid-phase embedded epitaxy in the GaInAsP/InP system is described, and a new heterostructure laser is grown using this technique. These lasers exhibit excellent current and optical confinement. Threshold currents as low as 45 mA are achieved for a laser with 4-..mu..m-wide active region.

• Research Organization: California Inst. of Tech., Pasadena
• OSTI ID: 6569663
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
CRYSTAL GROWTH
CURRENTS
ELECTRIC CURRENTS
ENERGY
EPITAXY
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIQUIDS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD ENERGY