High-power, low-threshold, single-mode GaInAsP/InP laser by low-temperature, single-step liquid phase epitaxy
A GaInAsP/InP laser (lambda/sub g/ = 1.3 ..mu..m) on grooved substrate with a lens-shaped active layer, in which the current blocking junction is grown exclusively outside of the groove, has been fabricated by single-step liquid phase epitaxy. This technique is based on the preferential growth effects of InP and GaInAsP on the (100) oriented substrate with (011) directed grooves. Under cw operation, low threshold current (38 mA), high output power (40 mW/facet), and high external differential quantum efficiency (56%) are accomplished; fundamental transverse mode operation up to an output of 30 mW/facet is verified. These successful characteristics are realized by the introduction of the inner current confining layer.
- Research Organization:
- Research Laboratory, OKI Electric Industry Company, Ltd., Higashi-Asakawa, Hachioji, Tokyo 193, Japan
- OSTI ID:
- 6875863
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:4; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFRARED RADIATION
JUNCTIONS
LASERS
LIQUID PHASE EPITAXY
OPERATION
OSCILLATION MODES
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD ENERGY