Single transverse mode condition of lens-like strip waveguide GaInAsP/InP lasers
The theoretical analysis of the single transverse mode condition and lasing properties of a lens-like strip GaInAsP/InP laser is described. First, extended rate equations have been derived which include the carrier diffusion in the active layer and the carrier spread in the cladding layer and the dependency of the carrier lifetime on the current density. Next, it has been shown that the reasonably good assumption that the field of a lasing mode is determined by the built-in index waveguide is effective for simplifying to solve these equations. The result on lasing properties from the theory has been compared with experiments which were made on GaInAsP/InP(lambda = 1.3..mu..m) lens-like strip and terraced substrate lasers. In addition, the single transverse mode condition is discussed and criteria have been obtained.
- Research Organization:
- Lsi Lab, Mitsubishi Electric Co.
- OSTI ID:
- 5942599
- Journal Information:
- IEEE Trans. Microwave Theory Tech.; (United States), Journal Name: IEEE Trans. Microwave Theory Tech.; (United States) Vol. MTT-30:10; ISSN IETMA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CARRIER MOBILITY
CONTROL
CURRENT DENSITY
DATA
DIFFERENTIAL EQUATIONS
EQUATIONS
EQUATIONS OF MOTION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LIFETIME
MOBILITY
MODE CONTROL
MODE SELECTION
NUMERICAL DATA
PARTIAL DIFFERENTIAL EQUATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THEORETICAL DATA
WAVEGUIDES