Ultra-low-threshold, high-bandwidth, very-low-noise operation of 1. 52 /mu/m GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD

Journal Article · Thu Jun 01 00:00:00 EDT 1989 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.29267· OSTI ID:5774337

Krakowski, M; Rondi, D; Talneau, A; Combemale, Y; Chevalier, G; Deborgies, F; Maillot, P; Richin, P; Blondeau, R; D'Auria, L

GaInAsP/InP distributed feedback (DFB) buried ridge structure laser diodes (BRS-LD) emitting at 1.52 /mu/m have been fabricated on material grown by two step low-pressure metalorganic chemical vapor deposition (LP-MOCVD), with a second-order corrugation on the GaInAsP guiding layer. The minimum CW threshold current of 5 mA is the lowest yet reported for DFB lasers at 1.5 /mu/m. Single longitudinal mode operation with a side mode suppression ratio of 40 dB from 20 to 100/sup 0/C with a temperature evolution of 0.64 A//sup 0/C has been obtained. At only 20 mA above threshold, a bandwidth of 9.6 GHz and a relative intensity noise (RIN) lower than -150 dB/Hz at 4 GHz have been measured.

• Research Organization: Thomson-CSF, Domaine de Corbeville, 91 - Orsay (France)
• OSTI ID: 5774337
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 25:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENT DENSITY
DEPOSITION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
LOW PRESSURE
MODE SELECTION
NOISE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING