Analysis of indium-phosphide/indium tin oxide solar cells

Conference · Fri May 01 00:00:00 EDT 1981

OSTI ID:6407878

Coutts, T. J.; Pearsall, N. M.; Nottenburg, R.; Ireland, P. J.; Kazmerski, L. L.

The mechanisms are investigated that underlie the operation of p-InP/n-ITO solar cells fabricated by depositing thin films of ITO onto InP substrates by both RF sputtering and ion-beam sputtering. The RF sputtered devices behave like SIS or heterojunction cells. The ion-beam sputtered cells behave more like buried homojunction devices. It is shown that the properties of these cells depend not only on the method of fabrication, but also on several other complicating effects which occur before, during and after deposition of the ITO. (LEW)

• Research Organization: Solar Energy Research Inst., Golden, CO (USA); Newcastle upon Tyne Polytechnic (UK)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6407878
• Report Number(s): SERI/TP-613-1225; CONF-810526-36; ON: DE81025907
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CAPACITANCE
CHALCOGENIDES
CURRENT DENSITY
DATA
DIRECT ENERGY CONVERTERS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
HETEROJUNCTIONS
HOMOJUNCTIONS
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDE SOLAR CELLS
INFORMATION
JUNCTIONS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
TIN COMPOUNDS
TIN OXIDES