Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits
- Fujitsu Labs. Ltd., Atsugi (Japan)
- Amdahl Corp., Rexburg, ID (United States)
- Los Alamos National Lab., NM (United States)
Neutron-induced soft error rates (SER`s) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SE`s). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, the SER data corresponds to those induced by cosmic ray neutrons. The {alpha}-particle induced SER`s were also measured for comparison with the neutron-induced SER`s. Neutron-induced SE`s occurred in both circuits. On the other hand, {alpha}-induced SE`s occurred in SRAM, but not in the Latch circuit. The measured SER`s agreed with simulated results. The authors discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level.
- OSTI ID:
- 638409
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 7 Vol. 45; ISSN 0018-9383; ISSN IETDAI
- Country of Publication:
- United States
- Language:
- English
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