Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

Journal Article · Wed Jul 01 04:00:00 EDT 1998 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.701475· OSTI ID:638409

Tosaka, Yoshiharu; Satoh, Shigeo; Itakura, Toru ^[1]; Woffinden, G A ^[2]; Wender, S A ^[3]

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1. Fujitsu Labs. Ltd., Atsugi (Japan)
2. Amdahl Corp., Rexburg, ID (United States)
3. Los Alamos National Lab., NM (United States)

Neutron-induced soft error rates (SER`s) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SE`s). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, the SER data corresponds to those induced by cosmic ray neutrons. The {alpha}-particle induced SER`s were also measured for comparison with the neutron-induced SER`s. Neutron-induced SE`s occurred in both circuits. On the other hand, {alpha}-induced SE`s occurred in SRAM, but not in the Latch circuit. The measured SER`s agreed with simulated results. The authors discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level.

• OSTI ID: 638409
• Journal Information: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 7 Vol. 45; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA PARTICLES
COMPARATIVE EVALUATIONS
COSMIC NEUTRONS
ELECTRONIC CIRCUITS
ERRORS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR STORAGE DEVICES