Cosmic ray neutron-induced soft errors in sub-half micron CMOS circuits

Journal Article · Fri Feb 28 23:00:00 EST 1997 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/55.556093· OSTI ID:449542

Tosaka, Y; Satoh, S; Itakura, T; Suzuki, K; Sugii, T ^[1]; Ehara, H ^[2]; Woffinden, G A ^[3]

---

1. Fujitsu Labs. Ltd., Atsugi (Japan)
2. Fujitsu Ltd., Kawasaki (Japan)
3. Amdahl Corp., Sunnyvale, CA (United States)

The authors numerically investigated cosmic ray neutron-induced soft errors in sub-half micron CMOS SRAM and Latch circuits at sea level. For the purpose, they developed an original simulator which well reproduces the experimental charge collection data. They investigated soft error rates (SER`s) and showed that the neutron-induced SER`s in the SRAM are the same order as those due to {alpha}-particles and the SER`s in the Latch are dominated by neutrons.

• OSTI ID: 449542
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 3 Vol. 18; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE COLLECTION
COSMIC NEUTRONS
ELECTRONIC CIRCUITS
ERRORS
NUMERICAL ANALYSIS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR STORAGE DEVICES