High-performance thin-film transistors fabricated using excimer laser processing and grain engineering
- Arizona State Univ., Tempe, AZ (United States). Dept. of Electrical Engineering
High-performance polysilicon thin-film transistors (TFT`s) are fabricated using an excimer laser to recrystallize the undoped channel and dope the source-drain regions. Using a technique the authors call grain engineering they are able to control grain microstructure using laser parameters. Resulting polysilicon films are obtained with average grain sizes of {approximately}4--9 {micro}m in sub-100 nm thick polysilicon films without substrate heating during the laser recrystallization process. Using a simple four-mask self-aligned aluminum top-gate structure, they fabricate TFT`s in these films. By combining the grain-engineered channel polysilicon regions with laser-doped source-drain regions, TFT`s are fabricated with electron mobilities up to 260 cm{sup 2}/Vs and on/off current ratios greater than 10{sup 7} To their knowledge, these devices represent the highest performance laser-processed TFT`s reported to date fabricated without substrate heating or hydrogenation.
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- OSTI ID:
- 638404
- Journal Information:
- IEEE Transactions on Electron Devices, Vol. 45, Issue 4; Other Information: PBD: Apr 1998
- Country of Publication:
- United States
- Language:
- English
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