A high performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films
- Hewlett-Packard Labs., Palo Alto, CA (United States)
- Ultratech Stepper, San Jose, CA (United States)
- Lawrence Livermore National Lab., CA (United States)
- Stanford Univ., CA (United States). Center for Integrated Systems
A high-performance polysilicon thin-film transistor (TFT) fabricated using XeCl excimer laser crystallization of pre-patterned amorphous Si films is presented. The enhanced TFT performance over previous reported results is attributed to pre-patterning before laser crystallization leading to enhanced lateral grain growth. Device performance has been systematically investigated as a function of the laser energy density, the repetition rate, and the number of laser shots. Under the optimal laser energy density, poly-Si TFT`s fabricated using a simple low-temperature ({le} 600 C) process have field-effect mobilities of 91 cm{sup 2}/V{center_dot}s (electrons) and 55 cm{sup 2}/V{center_dot}s (holes), and ON/OFF current ratios over 10{sup 7} at V{sub DS} = 10 V. The excellent overall TFT performance is achieved without substrate heating during laser crystallization and without hydrogenation. The results also show that poly-Si TFT performance is not sensitive to the laser repetition rate and the number of laser shots above 10.
- OSTI ID:
- 227895
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 4 Vol. 43; ISSN 0018-9383; ISSN IETDAI
- Country of Publication:
- United States
- Language:
- English
Similar Records
High-performance thin-film transistors fabricated using excimer laser processing and grain engineering
Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films