Low-temperature polysilicon thin-film transistors fabricated from laser-processed sputtered-silicon films

Journal Article · Tue Sep 01 00:00:00 EDT 1998 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/55.709637· OSTI ID:665301

Giust, G K; Sigmon, T W ^[1]; Carey, P G ^[2]; Weiss, B; Davis, G A ^[3]

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1. Arizona State Univ., Tempe, AZ (United States). Dept. of Electrical Engineering
2. Lawrence Livermore National Lab., CA (United States)
3. Intevac, Santa Clara, CA (United States)

In an effort to develop a simple low-temperature high-performance polysilicon thin-film transistor (TFT) technology, the authors report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temperature of 300 C, and produces devices with mobilities up to 450 cm{sup 2}/Vs, on/off current ratios greater than 10{sup 7}, without using a post-hydrogenation step. They believe these results represent the highest performance TFT`s to date fabricated from sputtered silicon films.

• Sponsoring Organization: Office of Naval Research, Washington, DC (United States); USDOE, Washington, DC (United States)
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 665301
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 9 Vol. 19; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CARRIER MOBILITY
FABRICATION
LASER RADIATION
PERFORMANCE
SILICON
SPUTTERING
TRANSISTORS