Performance improvement obtained for thin-film transistors fabricated in prepatterned laser-recrystallized polysilicon

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · IEEE Electron Device Letters

DOI:https://doi.org/10.1109/55.585364· OSTI ID:500923

Giust, G K; Sigmon, T W ^[1]

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1. Arizona State Univ., Tempe, AZ (United States). Dept. of Electrical Engineering

Thin-film transistors (TFT`s) are fabricated in polysilicon films that are laser recrystallized either before or after active-area definition. The authors find the performance of TFT`s fabricated in active areas that are prepatterned before laser recrystallization is dramatically improved. For example, /the field-effect mobility is increased by a factor of three, the threshold voltage is reduced from 5.32 V to 0.07 V, and the subthreshold slope is cut in half for W/L = 10 {micro}m/10 {micro}m TFT`s. All TFT`s discussed utilize gas-immersion laser-doped source and drain junctions and are unhydrogenated.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 500923
• Journal Information: IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 6 Vol. 18; ISSN 0741-3106; ISSN EDLEDZ
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ELECTRICAL PROPERTIES
FABRICATION
PERFORMANCE
RECRYSTALLIZATION
SILICON
THIN FILMS
TRANSISTORS