Sputtered amorphous silicon solar cells. Quarterly report No. 2, October 22, 1980-January 22, 1981

Technical Report · Thu Jan 01 04:00:00 EST 1981

DOI:https://doi.org/10.2172/6378884· OSTI ID:6378884

Moustakas, T. D.; Morel, D. L.; Wronski, C. R.

The mechanism of hydrogen incorporation during the film growth was investigated through hydrogen content studies. The data are consistent with a kinetic model of hydrogen incorporation. The hole mobility-lifetime products were measured on a-SiH/sub x//metal Schottky barrier structures with a new method utilizing optical absorption, collection efficiency, and capacitance voltage measurements. The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a-SiH/sub x//Pt) were investigated as a function of hydrogen content. The data are interpreted in terms of hydrogen modification of the valence band edge and interfacial oxide effects. The fabrication by the method of sputtering of P-I-N/ITO solar cell structures is reported. (MHR)

• Research Organization: Exxon Research and Engineering Co., Linden, NJ (USA). Advanced Energy Systems Labs.
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6378884
• Report Number(s): SERI/PR-9219-T1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ABUNDANCE
AMORPHOUS STATE
CAPACITANCE
CHEMICAL REACTIONS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY GAP
EQUIPMENT
FABRICATION
HOLE MOBILITY
HYDRIDES
HYDROGEN ADDITIONS
HYDROGEN COMPOUNDS
HYDROGENATION
KINETICS
MATHEMATICAL MODELS
METALS
MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLATINUM
PLATINUM METALS
REACTION KINETICS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING
TRANSITION ELEMENTS