Electron-hole recombination in reactively sputtered amorphous silicon solar cells

Journal Article · Sun Nov 01 00:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92861· OSTI ID:5985387

Moustakas, T D; Wronski, C R; Tiedje, T

The electron-hole recombination has been investigated in reactively sputtered hydrogenated amorphous silicon (a-SiH/sub x/) metal Schottky barrier solar cell structures. We find that electron-hole recombination proceeds through states in the middle of the gap. These states, whose density depends on the degree of hydrogenation, have been associated with Si dangling bonds and their effective carrier capture cross section was estimated to be 6 x 10/sup -15/ cm/sup 2/.

• Research Organization: Corporate Research Laboratory, Exxon Research and Engineering Company, P. O. Box 45, Linden, New Jersey 07036
• OSTI ID: 5985387
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 39:9
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SCHOTTKY BARRIER SOLAR CELLS
RECOMBINATION
SILICON SOLAR CELLS
ENERGY-LEVEL DENSITY
AMORPHOUS STATE
CHARGE CARRIERS
CHEMICAL BONDS
CHEMICAL REACTIONS
CROSS SECTIONS
ELECTRONS
ENERGY GAP
EXPERIMENTAL DATA
HOLES
HYDROGENATION
MATHEMATICAL MODELS
SPUTTERING
DATA
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
INFORMATION
LEPTONS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion