Electron-hole recombination in reactively sputtered amorphous silicon solar cells

Journal Article · Sun Nov 01 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92861· OSTI ID:5985387

Moustakas, T D; Wronski, C R; Tiedje, T

The electron-hole recombination has been investigated in reactively sputtered hydrogenated amorphous silicon (a-SiH/sub x/) metal Schottky barrier solar cell structures. We find that electron-hole recombination proceeds through states in the middle of the gap. These states, whose density depends on the degree of hydrogenation, have been associated with Si dangling bonds and their effective carrier capture cross section was estimated to be 6 x 10/sup -15/ cm/sup 2/.

• Research Organization: Corporate Research Laboratory, Exxon Research and Engineering Company, P. O. Box 45, Linden, New Jersey 07036
• OSTI ID: 5985387
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHARGE CARRIERS
CHEMICAL BONDS
CHEMICAL REACTIONS
CROSS SECTIONS
DATA
DIRECT ENERGY CONVERTERS
ELECTRONS
ELEMENTARY PARTICLES
ENERGY GAP
ENERGY-LEVEL DENSITY
EQUIPMENT
EXPERIMENTAL DATA
FERMIONS
HOLES
HYDROGENATION
INFORMATION
LEPTONS
MATHEMATICAL MODELS
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SCHOTTKY BARRIER SOLAR CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPUTTERING