Sputtered-amorphous-silicon solar cells. Final technical report, July 22, 1980-July 22, 1981
The electronic bombardment has been identified as the parameter which controls the amorphous si film's microstructure. Utilizing this finding, material with good electronic properties has been produced. Also, a kinetic model has been developed for the hydrogen incorporation and methods to manipulate the hydrogen bonding configuration. Factors are identified, besides the hydrogen content, which influence the optical gap. Material was produced with the lowest density of states in the gap reported in the literature and the dangling bond was identified as the important defect for carrier recombination. The correlation between optical gap barrier height and collection width suggest that films with gaps larger than 1.8 eV may lead to devices with higher efficiency. Finally, the effect of phosphorous and boron contamination as well as compensation effects have been demonstrated. P-I-N solar cells with efficiency of 4% have been obtained. These results suggest that reactive sputtering would lead to solar cell structure with efficiency equivalent to those of glow discharge.
- Research Organization:
- Solar Energy Research Inst., Golden, CO (USA); Exxon Research and Engineering Co., Linden, NJ (USA). Advanced Energy Systems Labs.
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 5251101
- Report Number(s):
- SERI/TR-9219-T2; ON: DE82012235
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structure and electronic studies of defects in amorphous silicon. Final report, May 1981-April 1982
Preparation and characterization of hydrogenated amorphous-silicon films produced by ion plating and hydrogenated amorphous-boron films produced by glow-discharge decomposition. Final report, April 1, 1980-May 31, 1981
Related Subjects
SILICON
MICROSTRUCTURE
SPUTTERING
SILICON SOLAR CELLS
EFFICIENCY
ELECTRICAL PROPERTIES
FABRICATION
AMORPHOUS STATE
BORON
CAPACITANCE
ELECTRIC POTENTIAL
ENERGY GAP
ENERGY LEVELS
HYDROGEN
IMPURITIES
PERFORMANCE
PHOSPHORUS
QUANTUM EFFICIENCY
RECOMBINATION
SCHOTTKY BARRIER SOLAR CELLS
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion