Tailoring of recovery charge in power diodes and thyristors by irradiation. [2 MeV electrons]
The recovery charge of power diodes and thyristors is tailored and matched by irradiation through a major surface of the semiconductor body with a given radiation source, preferably of electron radiation, to a dosage corresponding to between about 1 x 10/sup 12/ and 8 x 10/sup 12/ electrons per centimeter square with 2 MeV electron radiation. The recovery charge of each device of a group of a type of diode or thyristor is first measured and the group divided into subgroups according to the measured recovery charge of each device. The devices of at least one subgroup is then irradiated by a radiation source to dosages corresponding to between about 1 x 10/sup 12/ and 8 x 10/sup 12/ electrons per centimeter square with 2 MeV electron radiation. The recovery charge of each irradiated device is again measured to determine the incremental change of recovery charge as a function of irradiation dosage. A recovery charge of another device of the type of diode or thyristor is then measured, and the device irradiated with a radiation source to a determined dosage corresponding to a desired incremental change in recovery charge to tailor the recovery charge of said device to a desired value.
- Assignee:
- Westinghouse Electric Corp.
- Patent Number(s):
- US 4075037
- OSTI ID:
- 6376401
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360300* -- Composite Materials-- (-1987)
CALIBRATION
ELECTRIC CHARGES
ELECTRIC POTENTIAL
ELECTRON SOURCES
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
ENERGY RECOVERY
FABRICATION
FERMIONS
LEPTONS
MEV RANGE
MEV RANGE 01-10
PARTICLE SOURCES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION SOURCES
RECOVERY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SILICON DIODES
THYRISTORS