Reducing the switching time of semiconductor devices by neutron irradiation

Patent · Mon Dec 22 23:00:00 EST 1980

OSTI ID:6624663

Bartko, J; Chu, C K; Felice, P E; Tarneja, K S

The switching time of certain semiconductor devices is decreased while maintaining other electrical characteristics of the devices by irradiating them with a neutron radiation source of greater than 1.0 MeV. To a dosage between 1 X 1011 and 1 X 1015 neutrons per square centimeter. The irradiation is preferably to a dosage between 1 X 101 and 1 X 1014 neutrons per square centimeter and preferably has substantial energy greater than 14 mev. The devices are also annealed during and/or subsequent to the irradiation at a temperature higher than the highest specified temperature and preferably at least 50/sup 0/C. Higher than the highest specified temperature.

• Assignee: Westinghouse Electric Corp
• Patent Number(s): US 4240844
• OSTI ID: 6624663
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
BARYONS
ELECTRONIC CIRCUITS
ELEMENTARY PARTICLES
FERMIONS
HADRONS
HEAT TREATMENTS
IRRADIATION
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SWITCHING CIRCUITS