Selective irradiation for fast switching thyristor with low forward voltage drop
The switching speed of a thyristor is increased without correspondingly increasing the forward voltage drop by selectively irradiating at least portions of the PN junction between the conducting and gating portions, and 5 to 30 percent of the adjacent surface area of the conducting portions of the device. 50 to 100 percent of the surface area of the gating portions, and the peripheral portions can also be irradiated at the same time to decrease gate sensitivity and increase blocking voltage of the thyristor, respectively. Preferably, the thyristor is irradiated with electron radiation which preferably is of an intensity greater than 1 MeV and most desirably about 2 MeV. The electron irradiation is preferably to a dosage of between about 1 x 10$sup 13$ electrons/ cm$sup 2$ and 1 x 10$sup 15$ electrons/cm$sup 2$. (auth)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-33-000806
- Assignee:
- to Westinghouse Electric Corp.
- Patent Number(s):
- US 3877997
- OSTI ID:
- 4168238
- Country of Publication:
- United States
- Language:
- English
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