Fine tuning power diodes with irradiation
Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characcteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/tau = 1/tau/sub 0/ + K phi, where tau is the desired minority carrier lifetime, tau/sub 0/ is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 X 10/sup 12/ and 5 X 10/sup 13/ e/cm/sup 2/, with electron radiation of intensity between 1 and 3 MeV.
- Assignee:
- Westinghouse Electric Corp.
- Patent Number(s):
- US 3933527
- OSTI ID:
- 7353157
- Country of Publication:
- United States
- Language:
- English
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Instruments
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CARRIER LIFETIME
DESIGN
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
IRRADIATION
LEPTONS
LIFETIME
MEV RANGE
MEV RANGE 01-10
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TUNING