Passivation of III-V semiconductor surfaces by plasma nitridation

Patent · Tue May 15 00:00:00 EDT 1984

OSTI ID:6367548

Shuskus, A J

Type III-V compound semiconductor surfaces are passivated by exposure to a low pressure nitrogen plasma. The III element forms III element-nitride. Nitridation is performed in two steps; the first being at a low temperature to prevent decomposition of the surface by loss of V element, and the second step being performed at an elevated temperature at which nitridation proceeds at a faster rate. The resultant articles have a III element-nitride surface layer which protects the articles from environmental degradation while reducing the surface state density and permitting inversion of the surface layer.

• Assignee: United Technologies Corporation
• Patent Number(s): US 4448633
• OSTI ID: 6367548
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
DEPOSITION
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS
NITRIDATION
NITROGEN
NONMETALS
PASSIVATION
PLASMA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SURFACE AREA
SURFACE PROPERTIES