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Metal-based passivation-assisted plasma etching of III-v semiconductors

Patent ·
OSTI ID:1840499
; ; ; ;

According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.

Research Organization:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-07NA27344
Assignee:
Lawrence Livermore National Security, LLC (Livermore, CA)
Patent Number(s):
11,133,190
Application Number:
15/971,999
OSTI ID:
1840499
Country of Publication:
United States
Language:
English

References (8)

Sidewall passivation assisted by a silicon coverplate during Cl[sub 2]–H[sub 2] and HBr inductively coupled plasma etching of InP for photonic devices
  • Bouchoule, S.; Patriarche, G.; Guilet, S.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 2 https://doi.org/10.1116/1.2898455
journal January 2008
High-aspect-ratio inductively coupled plasma etching of InP using SiH4/Cl2: Avoiding the effect of electrode coverplate material
  • Gatilova, L.; Bouchoule, S.; Guilet, S.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 2 https://doi.org/10.1116/1.3546024
journal March 2011
Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma journal January 2002
Controlling the profile of high aspect ratio gratings in diamond journal March 2016
Addition of Si-Containing Gases for Anisotropic Etching of III–V Materials in Chlorine-Based Inductively Coupled Plasma journal August 2011
High temperature electron cyclotron resonance etching of GaN, InN, and AlN journal April 1995
Time-multiplexed, inductively coupled plasma process with separate SiCl[sub 4] and O[sub 2] steps for etching of GaAs with high selectivity
  • Golka, S.; Arens, M.; Reetz, M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 5 https://doi.org/10.1116/1.3225599
journal January 2009
Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching journal January 2015

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