Low-current-threshold and high-lasing uniformity GaAs--Al/sub x/Ga/sub 1-x/As double-heterostructure lasers grown by molecular beam epitaxy
Journal Article
·
· Appl. Phys. Lett.; (United States)
GaAs--Al/sub x/Ga/sub 1-x/As double-heterostructure (DH) lasers that have current-threshold densities at least as low as similar-geometry DH lasers prepared by liquid-phase epitaxy have been prepared by molecular beam epitaxy for the first time. These broad-area lasers exhibited excellent stability and uniformity in lasing-filament distribution across the entire junction plane and throughout the entire current injection range up to catastrophic damage. The burn-off powers were typically about 14 W/mm. The differential quantum efficiencies were about 40%.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6332187
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:7; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Very low current threshold GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers grown by molecular beam epitaxy
Extension of lasing wavelengths beyond 0. 87 mm in GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy
Laser oscillation with optically pumped very thin GaAs-Al/sub x/Ga/sub x/As multilayer structures and conventional double heterostructures
Journal Article
·
Mon Dec 31 23:00:00 EST 1979
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5707046
Extension of lasing wavelengths beyond 0. 87 mm in GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy
Journal Article
·
Fri May 01 00:00:00 EDT 1981
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6774794
Laser oscillation with optically pumped very thin GaAs-Al/sub x/Ga/sub x/As multilayer structures and conventional double heterostructures
Journal Article
·
Fri Oct 01 00:00:00 EDT 1976
· J. Appl. Phys.; (United States)
·
OSTI ID:7156483
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFICIENCY
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STABILITY
SURFACE COATING
THRESHOLD ENERGY
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EFFICIENCY
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
STABILITY
SURFACE COATING
THRESHOLD ENERGY