Laser diagnostics of silicon chemical vapor deposition: In situ measurements and comparisons with model predictions
Conference
·
OSTI ID:6318043
In situ measurements of gas phase temperature profiles and chemical species density profiles have been measured during the chemical vapor deposition (CVD) of silicon from silane. Laser Raman spectroscopy was used to obtain gas temperature profiles and silane density profiles, and laser-excited fluorescence was used to obtain relative density profiles of Si atoms and silicon dimers. These measurements are compared to profiles predicted by the mathematical model of Coltrin, Kee, and Miller. We give an overview of the gas-phase chemistry of this CVD process that results from the model predictions and experimental confirmations.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6318043
- Report Number(s):
- SAND-87-0619C; CONF-871027-5; ON: DE87008514
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
640202* -- Atmospheric Physics-- Effects of Nuclear Detonations
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
LASER RADIATION
LASER SPECTROSCOPY
QUANTITATIVE CHEMICAL ANALYSIS
RADIATIONS
RAMAN SPECTROSCOPY
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACE COATING
TEMPERATURE DEPENDENCE
656002 -- Condensed Matter Physics-- General Techniques in Condensed Matter-- (1987-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL ANALYSIS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
LASER RADIATION
LASER SPECTROSCOPY
QUANTITATIVE CHEMICAL ANALYSIS
RADIATIONS
RAMAN SPECTROSCOPY
SEMIMETALS
SILICON
SPECTROSCOPY
SURFACE COATING
TEMPERATURE DEPENDENCE