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Laser diagnostics of silicon chemical vapor deposition: In situ measurements and comparisons with model predictions

Conference ·
OSTI ID:6318043

In situ measurements of gas phase temperature profiles and chemical species density profiles have been measured during the chemical vapor deposition (CVD) of silicon from silane. Laser Raman spectroscopy was used to obtain gas temperature profiles and silane density profiles, and laser-excited fluorescence was used to obtain relative density profiles of Si atoms and silicon dimers. These measurements are compared to profiles predicted by the mathematical model of Coltrin, Kee, and Miller. We give an overview of the gas-phase chemistry of this CVD process that results from the model predictions and experimental confirmations.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
6318043
Report Number(s):
SAND-87-0619C; CONF-871027-5; ON: DE87008514
Country of Publication:
United States
Language:
English