Theoretical modeling and laser diagnostics of silicon chemical vapor deposition
The authors have developed a numerical model of the coupled gas-phase chemical kinetics and fluid mechanics in the Chemical Vapor Deposition (CVD) of silicon from silane. The model includes 29 chemical reactions describing the thermal decomposition of silane and predicts gas-phase concentration profiles of 17 chemical species as a function of susceptor temperature, carrier gas, pressure, flow rate. The model also predicts gas-phase temperature and velocity fields, deposition rates and deposition uniformity. Comparisons are made between model predictions and in situ measurements of gas-phase temperatures, and density profiles of SiH/sub 4/ and Si/sub 2/. Agreement between theory and experiment is generally good.
- Research Organization:
- Sandia National Labs., Albuquerque, NM 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6475263
- Report Number(s):
- CONF-851123-
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601 -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DENSITY
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
FLOW RATE
FLUID FLOW
GAS FLOW
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
LASER RADIATION
MATHEMATICAL MODELS
MEASURING METHODS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PRESSURE EFFECTS
PRODUCTION
RADIATIONS
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
TEMPERATURE EFFECTS
TEMPERATURE MEASUREMENT
THERMAL DEGRADATION