A mathematical model of the coupled fluid mechanics and chemical kinetics in a chemical vapor deposition reactor
The authors describe a numerical model of the coupled gas-phase hydrodynamics and chemical kinetics in a silicon chemical vapor deposition (CVD) reactor. The model, which includes a 20-step elementary reaction mechanism for the thermal decomposition of silane, predicts gas-phase temperature, velocity, and chemical species concentration profiles. It also predicts silicon deposition rates at the heated reactor wall as a function of susceptor temperature, carrier gas, pressure, and flow velocity. The authors find excellent agreement with experimental deposition rates, with no adjustment of parameters. The model indicates that gas-phase chemical kinetic processes are important in describing silicon CVD.
- Research Organization:
- Sandia National Lab., Laser and Atomic Physics Div., Albuquerque, NM
- OSTI ID:
- 6596497
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 131:2; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL REACTIONS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
CRACKING
DECOMPOSITION
DEPOSITION
ELEMENTS
FLUID MECHANICS
FLUIDS
GASES
HEAT TRANSFER FLUIDS
HYDRIDES
HYDRODYNAMICS
HYDROGEN COMPOUNDS
KINETICS
MATHEMATICAL MODELS
MECHANICS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHASE TRANSFORMATIONS
PYROLYSIS
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING
THERMAL CRACKING
THERMOCHEMICAL PROCESSES
THERMODYNAMICS
VAPORS