Si deposition rates in a two-dimensional CVD (chemical vapor deposition) reactor and comparisons with model calculations

Technical Report · Sun Oct 01 00:00:00 EDT 1989

DOI:https://doi.org/10.2172/5370171· OSTI ID:5370171

Breiland, W. G.; Coltrin, M. E.

Deposition rates are presented for silicon from silane in a helium carrier gas using a tubular CVD reactor with a two-dimensional flow geometry. Measured surface-temperature profiles, inlet gas velocities, total pressures, and silane/helium concentrations are reported, providing exact boundary conditions that can be used in a two-dimensional numerical CVD model. Comparisons are made between this data and two variations of a model by Coltrin, Kee, and Miller in which different empirical expressions for the silane and disilane reactive sticking coefficient are used.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5370171
• Report Number(s): SAND-89-2090; ON: DE90005003
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
FLOW RATE
FLUIDS
GASES
HELIUM
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
RARE GASES
REACTION INTERMEDIATES
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING