Comparisons between a gas-phase model of silane chemical vapor deposition and laser-diagnostic measurements
Theoretical modeling and experimental measurements have been used to study gas-phase chemistry in the chemical vapor deposition (CVD) of silicon from silane. Pulsed laser Raman spectroscopy was used to obtain temperature profiles and to obtain absolute density profiles of silane during deposition at atmospheric and 6-Torr total pressures for temperatures ranging from 500 to 800/sup 0/C. Laser-excited fluorescence was used to obtain relative density profiles of Si/sub 2/ during deposition at 740 /sup 0/C in helium with 0-12 Torr added hydrogen. These measurements are compared to predictions from the theoretical model of Coltrin, Kee, and Miller. The predictions agree qualitatively with experiment. These studies indicate that fluid mechanics and gas-phase chemical kinetics are important considerations in understanding the chemical vapor deposition process.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5957005
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 59:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
CHEMICAL COATING
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELEMENTS
HIGH TEMPERATURE
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
LASER SPECTROSCOPY
MATHEMATICAL MODELS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
RAMAN SPECTROSCOPY
REACTION KINETICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
SURFACE COATING
VERY HIGH TEMPERATURE