Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

Technical Report · Fri Nov 01 04:00:00 EST 1985

DOI:https://doi.org/10.2172/6308564· OSTI ID:6308564

Haegel, N M

An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6308564
• Report Number(s): LBL-20627; ON: DE86005191
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
CARRIER LIFETIME
CRYSTAL GROWTH
DATA
DIRECT ENERGY CONVERTERS
DOPED MATERIALS
ELEMENTS
EXPERIMENTAL DATA
FUNCTIONS
GERMANIUM
INFORMATION
LIFETIME
MATERIALS
METALS
NUMERICAL DATA
PHOTOCONDUCTIVE CELLS
PHOTOELECTRIC CELLS
RESPONSE FUNCTIONS
TEMPERATURE DEPENDENCE
ZINC ADDITIONS
ZINC ALLOYS