Ge:Be far infrared photoconductors

Conference · Thu Aug 01 04:00:00 EDT 1985

OSTI ID:5028578

Haegel, N M; Haller, E E

Ge:Be photoconductors have been optimized for the 30 to 50 ..mu..m wavelength range. Crystal growth of detector quality material requires good control of both the Be and residual impurity doping. Detective quantum efficiencies of eta/sub d/ = 46% at 5 A/W have been achieved at a photon background of 10/sup 8/ p/s. The responsivity of Ge:Be detectors can be strongly temperature-dependent when the residual shallow levels in the material are closely compensated. Transient responses on the order of approx.1 second have been observed in some materials. The role of residual shallow impurities on the performance of photoconductors doped with semi-deep and deep impurities is discussed. 23 refs., 7 figs., 2 tabs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5028578
• Report Number(s): LBL-20238; CONF-8508141-1; ON: DE86001979
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ALLOYS
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
CRYSTAL GROWTH
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
FAR INFRARED RADIATION
GE SEMICONDUCTOR DETECTORS
IMPURITIES
INFRARED RADIATION
MATERIALS
MEASURING INSTRUMENTS
PERFORMANCE
PHOTODETECTORS
PULSE RISE TIME
RADIATION DETECTORS
RADIATIONS
SEMICONDUCTOR DETECTORS
TIMING PROPERTIES