Performance and materials aspects of Ge:Be photoconductors
Conference
·
OSTI ID:5839277
Ge:Be photoconductors have been developed for low-photon-background applications in the 30 to 50 ..mu..m wavelength region. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently operating in this wavelength range. Beryllium-doped single crystals were grown by the Czochralski method from a carbon susceptor under a vacuum of approx. 10/sup -6/ torr. We report an optimum detective quantum efficiency of 46% at a background flux of 1.5 x 10/sup 8/ photons/second (7 x 10/sup -13/ W). Ge:Be detector performance is strongly influenced by the absolute concentrations and the concentration ratio of residual shallow donors and hallow acceptors.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5839277
- Report Number(s):
- LBL-15409; CONF-830235-1; ON: DE83014863
- Country of Publication:
- United States
- Language:
- English
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