Performance and materials aspects of Ge:Be and Ge:Ga photoconductors for far-infrared detection

Technical Report · Thu Sep 01 04:00:00 EDT 1983

OSTI ID:5675402

Haegel, N M

Ge:Be and Ge:Ga single crystal material has been developed for use as far infrared photoconductors in low photon background applications. Crystal growth and characterization have been performed in conjunction with measurements of photoconductor performance. Reliable Be doping for Ge:Be detectors has been achieved using Czochralski growth from a carbon susceptor under vacuum. These detectors provide higher responsivity and lower noise equivalent power (NEP) than the Ge:Ga detectors currently used in the 30 to 50 ..mu..m wavelength range. The responsivity of Ge:Be detectors is strongly temperature dependent when the residual shallow acceptors are closely compensated. The breakdown field in low compensation Ge:Ga detectors (K = 10/sup -4/) has been extended from 1.0 to 2.0 V/cm by the introduction of neutral scattering centers. Indiffusion of Cu has been used to limit the mobility and allow the detectors to be operated at higher biases where optimum NEP and responsivity are attained.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 5675402
• Report Number(s): LBL-16694; ON: DE84003046
• Country of Publication: United States
• Language: English

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47 OTHER INSTRUMENTATION
ALKALINE EARTH METALS
BERYLLIUM
CARRIER DENSITY
CRYSTAL GROWTH
CRYSTALS
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EXPERIMENTAL DATA
FAR INFRARED RADIATION
GALLIUM
GERMANIUM
INFORMATION
INFRARED RADIATION
METALS
MONOCRYSTALS
NUMERICAL DATA
PERFORMANCE
PHOTOCONDUCTIVITY
PHOTOCONDUCTORS
PHYSICAL PROPERTIES
RADIATIONS
SPECTRAL RESPONSE
TEMPERATURE DEPENDENCE