Development of high responsivity Ge:Ga photoconductors
Conference
·
OSTI ID:6543350
Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10/sup -4/ have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10/sup 8/ photons/sec at lambda=93 ..mu..m. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6543350
- Report Number(s):
- LBL-17032; CONF-840725-7; ON: DE84016903
- Country of Publication:
- United States
- Language:
- English
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