Correlating plasma emissivity and etch depth
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering
The control and monitoring of plasma properties during the dry etch process remains important in Si-based technology. The authors will discuss how plasma emissivity and etch uniformity are related by carefully controlling the plasma conditions. Spatially resolved optical imaging experiments were performed in a parallel plate reactor known as the Gaseous Electronics Conference (GEC) RF Reference Cell. With 4 inch diameter Al electrodes and a 1 inch spacing separating them, the Reference Cell was designed and constructed as a standardized etching system, the results of which are intended to be used to compare theoretical models. In this work, the authors examine the plasma uniformity simultaneously to etching single 3 inch silicon wafers with a simple test pattern in a 30 sccm CF{sub 4}/15 sccm Ar plasma for several discharge conditions. With real-time process uniformity control as the goal, by monitoring the SR-OES during the etch process, the relationship between plasma emissivity and etch uniformity can be determined.
- OSTI ID:
- 63063
- Report Number(s):
- CONF-940604--; ISBN 0-7803-2006-9
- Country of Publication:
- United States
- Language:
- English
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