Reactive ion etching in the Gaseous Electronics Conference RF Reference Cell
- Univ. of Michigan, Ann Arbor, MI (United States). Dept. of Nuclear Engineering
- Sandia National Labs., Albuquerque, NM (United States)
This paper describes the results of using the GEC reference cell as a reactive ion etcher. Silicon wafers with layers of polysilicon and silicon dioxide on crystalline silicon patterned with photoresist have been investigated with fluorine and chlorine chemistries. Scanning electron microscopy (SEM), profilometry, and refraction techniques were used to determine the etch parameters such as etch rate, uniformity and selectivity. The discharges are in general monitored by measuring the optical emission spectroscopy and the bias voltages. For fluorine chemistries, etch rates ranged from 5 nm/min to 177 nm/min, and for chlorine chemistries, etch rates ranged from 25 nm/min to 90 nm/min. Depending upon the discharge and chemistry conditions, similar etch rates and etch patterns of different GEC cells were obtained. Etch rates and relative fluorine concentrations obtained from a commercial etcher were compared to the GEC reference cell and were found to be similar although the GEC cell generally gave lower etch rates than the commercial etcher.
- Research Organization:
- Sandia National Laboratory
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 163203
- Journal Information:
- Journal of Research of the National Institute of Standards and Technology, Journal Name: Journal of Research of the National Institute of Standards and Technology Journal Issue: 4 Vol. 100; ISSN 1044-677X; ISSN JRITEF
- Country of Publication:
- United States
- Language:
- English
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