Comparison of etch performance in the GEC Reference Cell with a commercial etcher
- Univ. of Michigan, Ann Arbor, MI (United States)
The GEC Reference Cell was developed as a tool to investigate RF discharges used in the etching of semiconductors. The GEC Reference Cell is a parallel plate system with 4 inch aluminum electrodes spaced 1 inch apart. A comparison of etch performance of the GEC Reference Cell with a commercial, parallel plate RIE (SEMI Group 1000 TP/CC) will be presented. The polysilicon 3 inch wafers were etched in CF{sub 4}/Ar in pressures ranging from 75 to 150 mTorr with a gas flow of CF{sub 4} of 30 sccm and 1.2 sccm of Ar. The power was varied from 5 to 20 watts resulting in etch rates from 30 to 3000 {angstrom}/min. The plate spacing and power density were matched to give similar operating conditions. However, bias voltages were usually larger for the commercial tool than for the GEC Reference Cell. Actinometry was performed on the 704 nm fluorine line and the 703 nm argon emission line in both systems while etching to monitor changes in the relative fluorine concentration. The commercial system consistently showed higher etch rates. This was probably due to the greater DC bias voltage which resulted from the larger diameter of its powered electrode (30 cm). Both systems showed very similar actinometric trends as operating conditions were varied.
- OSTI ID:
- 46165
- Report Number(s):
- CONF-940604--; ISBN 0-7803-2006-9
- Country of Publication:
- United States
- Language:
- English
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