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Interface chemistry of metal-GaAs Schottky-barrier contacts

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.90642· OSTI ID:6296922
A survey of the metal-semiconductor interface chemistry for GaAs and seven metals, Ag, Al, Au, Cr, Fe, Sn, and Ti, by using x-ray photoemission spectroscopy (XPS) is reported. Sn and Ag each form an abrupt inert interface with GaAs. Au, Al, Fe, Cr, and Ti each form a chemically reacted nonabrupt interface with a trend for increasing dissociation of GaAs in the order listed. Also reported is the first observation of epitaxial Fe growth on GaAs.
Research Organization:
Rockwell International Science Center, Thousand Oaks, California 91360
OSTI ID:
6296922
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:10; ISSN APPLA
Country of Publication:
United States
Language:
English