Electronic structure of metal/GaAs(110) interfaces

Thesis/Dissertation · Thu Jan 01 04:00:00 EST 1987

OSTI ID:7002349

Joyce, J J

The electronic structure of metal/GaAs(110) interfaces was investigated by the use of high-resolution synchrotron radiation core level photoemission. Thermochemical and electronegativity data pertaining to the possible compounds and solid solutions which can form in the interface region were used together with photoemission results to model the interfaces and establish general trends in metal/GaAs interface development. Results for Ce, Sm, Ti, V, Cr, Fe, Co, Cu, and Au overlayers on GaAs(110) are presented. The thermochemical information shows that the heats of formation and solution are generally greater for metal-As interface products than for metal-Ga interface products. The general trend identified for these metal/GaAs systems in that the Ga found in the interface region is in a solid solution of variable concentration. The solid solution tends toward increased concentration until a solution of Ga fully coordinated by overlayer atoms is reached. Quantitative fitting of the Ga core level spectra indicates that the Ga in solution in the interface regions has a chemical shift of -880, -850, -650, -650, -350, -150, 0, 100, and 500 meV for Ce, Sm, Ti, V, Cr, Fe, Co, Cu, and Au, respectively.

• Research Organization: Wisconsin Univ., Madison (USA)
• OSTI ID: 7002349
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
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ARSENIC COMPOUNDS
ARSENIDES
CERIUM
CHROMIUM
COBALT
COPPER
ELECTRONIC STRUCTURE
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INTERFACES
IRON
METALS
PNICTIDES
RARE EARTHS
SAMARIUM
TITANIUM
TRANSITION ELEMENTS
VANADIUM