Systematics of electronic structure and local bonding for metal/GaAs(110) interfaces

Journal Article · Wed Jul 01 04:00:00 EDT 1987 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.574907· OSTI ID:6371420

Joyce, J J; Grioni, M; del Giudice, M; Ruckman, M W; Boscherini, F; Weaver, J H

We present high-resolution synchrotron radiation core level photoemission results which reveal the evolving electronic structures and morphologies of metal/GaAs interfaces for the metals Ce, Sm, Ti, V, Cr, Fe, Co, Cu, and Au. By studying a wide range of overlayer metals we sought to identify common interface characteristics and discriminate between chemical and morphological effects. Quantitative fitting of the Ga and As 3d core level emission provided insight into the stages of interface development. Our results indicate that Ga is found in solution at these interfaces with chemical shifts from -0.40 eV for Au to -1.78 eV for Ce (relative to Ga in GaAs). In contrast, the results for As indicate well-defined local chemical environments and, in some cases, the possibility of surface segregation. A direct correlation between overlayer electronegativity and core level shifts is observed.

• Research Organization: Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455
• OSTI ID: 6371420
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 5:4; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ARSENIC COMPOUNDS
ARSENIDES
CERIUM
CHEMISTRY
CHROMIUM
COBALT
COPPER
ELECTRONEGATIVITY
ELECTRONIC STRUCTURE
ELEMENTS
EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INTERFACES
IRON
METALS
MORPHOLOGY
PHOTOEMISSION
PNICTIDES
RARE EARTHS
SAMARIUM
SECONDARY EMISSION
TITANIUM
TRANSITION ELEMENTS
VANADIUM