Evidence for two pinning mechanisms with noble metals on InP(110)

Journal Article · Mon May 01 04:00:00 EDT 1989 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.575811· OSTI ID:6292797

Cao, R; Miyano, K; Lindau, I; Spicer, W E

Interfacial chemistry and Fermi-level movement for interfaces of noble metals on InP(110) prepared at room temperature (RT) and 80 K low temperature (LT) have been examined using photoelectron spectroscopy. An interfacial reaction is detected for all the RT interfaces as well as the LT Cu/InP interface, and the Fermi levels are pinned at 0.95 eV above the valence-band maximum (VBM). However, for LT Au/InP and Ag/InP, no reaction is seen, and the Fermi level is pinned around 0.7 eV above the VBM. The 0.7-eV pinning position at the near ideal LT Au/InP and Ag/InP interface is associated with metal induced gap states (MIGS), whereas, that at 0.95 eV is associated with defects formed during the interfacial reaction. These results indicate that both MIGS and defects can be important in the Fermi-level pinning and that the former is dominant only when the defect density is sufficiently low.

• Research Organization: Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
• OSTI ID: 6292797
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
CHEMISTRY
COATINGS
COPPER
DATA
DEPOSITION
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY LEVELS
EXPERIMENTAL DATA
FERMI LEVEL
GOLD
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INTERFACES
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PNICTIDES
SCHOTTKY EFFECT
SILVER
SPECTROSCOPY
TRANSITION ELEMENTS
ULTRAHIGH VACUUM