Ag-InP(110) interface: Photoemission studies of interfacial reactions and Schottky-barrier formation

Journal Article · Fri Jun 15 04:00:00 EDT 1984 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.29.6614· OSTI ID:6457687

Babalola, I A; Petro, W G; Kendelewicz, T; Lindau, I; Spicer, W E

The effects of interfacial reaction at Ag-InP(110) interfaces have been studied with soft-x-ray photoemission spectroscopy of the core levels and valence band. By systematically increasing the Ag coverages, we have been able to identify two coverage ranges with different stages of physical interactions and interface developments from a detailed study of the In 4d, P 2p, and Ag 3d core levels as well as valence-band structures. At lower Ag coverages (0

• Research Organization: Stanford Electronics Laboratories, Stanford University, Stanford, California 94305
• OSTI ID: 6457687
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 29:12; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
COUPLING
COVERINGS
DATA
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY LEVELS
EXPERIMENTAL DATA
FERMI LEVEL
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INTERFACES
IONIZING RADIATIONS
METALS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOEMISSION
PNICTIDES
RADIATIONS
SCHOTTKY EFFECT
SECONDARY EMISSION
SILVER
SOFT X RADIATION
TRANSITION ELEMENTS
X RADIATION