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Abrupt interfaces on InP(110): Cases of Sb and Sn

Journal Article · · J. Vac. Sci. Technol., B; (United States)
DOI:https://doi.org/10.1116/1.584592· OSTI ID:6010953

The formation of the Sb and Sn/InP(110) interfaces has been studied /ital in/ /ital situ/ by soft x-ray core level photoemission spectroscopy. It is found that in both cases the growth of the first uniform monolayer is followed by the formation of large overlayer islands (Stranski--Krastanov mode). The dramatic sharpening of the substrate core levels at one monolayer of Sb indicates the formation of an ordered epitaxial overlayer. No such effect is seen for Sn for which the In 4/ital d/ core level shows an indication of surface disruption. Despite the lack of order, this interface also remains mostly nonreactive. A straightforward analysis of the data for these particularly simple interfaces indicates nonequivalent shifts in the P 2/ital p/ and In 4/ital d/ core levels which are taken as a measure of the band bending. The origin of this discrepancy is shown to be related to an additional interface component in the In 4/ital d/ core level data. The results of this study indicate that even for nonreactive InP interfaces one must take this into account in using core level photoemission data for quantitative band bending determination. Interestingly, both Sb and Sn, although nonreactive, appear to form Ohmic contacts to InP(110).

Research Organization:
Stanford Electronic Laboratories, Stanford University, Stanford, California 94305(US)
OSTI ID:
6010953
Journal Information:
J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 7:4; ISSN JVTBD
Country of Publication:
United States
Language:
English

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