Epitaxial Ge/GaAs heterostructures by scanned cw laser annealing of a-Ge layers on GaAs
Expitaxial Ge/GaAs heterostructures have been produced by scanned cw argon laser annealing of 440-nm-thick amorphous Ge films on (100) semi-insulating GaAs substrates. Depending on the incident laser power and scan rate, two modes of film regrowth were observed. At low powers (between approx.1.6 and 4.0 W for a beam diameter of approx.40..mu..m) and scan rates between 1 and 400 cm/sec, polycrystalline Ge with a (100) preferred orientation was formed by an ''explosive'' crystallization mechanism. At higher powers, and over a scan rate range of 20--400 cm/sec, single-crystal films containing some dissolved GaAs in solution were obtained by liquid phase regrowth. Typical film resistivities rho were as follows: as-deposited, rho = 180 ..cap omega.. cm; polycrystalline films, rho = 3 x 10/sup -2/ cm; single-crystal films, rho = 9 x 10/sup -4/..cap omega.. cm.
- Research Organization:
- Departments of Metallurgy, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61810
- OSTI ID:
- 6271726
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 39:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360101* -- Metals & Alloys-- Preparation & Fabrication
AMORPHOUS STATE
ANNEALING
ARGON
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
CRYSTALS
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
ELEMENTS
EPITAXY
EQUIPMENT
EXPERIMENTAL DATA
FILMS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAS LASERS
GASES
GERMANIUM
HEAT TREATMENTS
HEATING
INFORMATION
LASER-RADIATION HEATING
LASERS
LAYERS
METALS
MONOCRYSTALS
NONMETALS
NUMERICAL DATA
OPTICAL EQUIPMENT
OPTICAL SCANNERS
ORIENTATION
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
POLYCRYSTALS
RARE GASES
RECRYSTALLIZATION
SUBSTRATES