Ge concentration in regrown GaAs for ohmic contacts
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Metal and Ceramic Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6376 (United States)
Dissociation and solid phase epitaxial regrowth of GaAs in Ti/Ge/Ni/GaAs were investigated using the transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS) of x-rays with spatial resolution approaching 2 nm. A ternary Ni{sub 2.4}GaAs phase, {approximately}130nm thick, was formed by 300{degree}C {ital in situ} anneals of 65 nm Ni film on GaAs. After this {ital in situ} anneal, films of 30 nm Ge and 20 nm Ti were deposited in sequence. The EDS analysis showed that Ni{sub 2.4}GaAs transformed into Ni{endash}As and Ni{endash}Ga binaries after annealing at 500{degree}C for 5 min, while {approximately}30nm of GaAs regrew by solid phase epitaxial regrowth from decomposition of the binary phases. High spatial resolution microanalysis allowed detection of {approximately}1{times}10{sup 20}cm{sup {minus}3} Ge in the regrown GaAs. This confirms that Ge is incorporated into GaAs during regrowth for ohmic contact formation. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 565554
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 71; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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