Metallurgy of Al--Ni--Ge ohmic contact formation on {ital n}-GaAs
- Materials Science Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)
- The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433 (United States)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Al--Ni--Ge ohmic contacts on {ital n}-GaAs were prepared by sequential vapor deposition and furnace annealing at 500 {degree}C. The metallurgical properties of the contacts were studied by transmission electron microscopy. It was found that while Al--Ni--Ge as a whole is relatively stable against GaAs, extensive interfacial reactions readily occur within the contact layers, resulting in a very stable layered structure of the type Al{sub 3}Ni/Ni--Ge/GaAs, with {epsilon}{prime}-Ni{sub 5}Ge{sub 3} being the major phase in the Ni--Ge layer. GaAs twins and Ni--As precipitates were found in a thin layer immediately below the metallization, suggesting that the ohmic behavior can be accounted for in terms of a GaAs regrowth mechanism. {copyright} {ital 1995} {ital American} {ital Vacuum} {ital Society}
- Research Organization:
- Lawrence Berkeley National Laboratory
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 240464
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 5 Vol. 13; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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