New Al-Ni-Ge contacts on GaAs: Their structure and electrical properties
The structure and composition of the recently developed Al-Ni-GE ohmic contacts to n-GaAs were investigated by transmission electron microscopy combined with secondary ion mass spectroscopy (SIMS) and Auger spectroscopy. The semiconductor/metal-alloy interface of these contacts remain very flat after annealing (500/degree/C, for 1 min - contact resistance 0.4 /times/ 10/sup /minus/6/..cap omega..cm/sup 2/), in contrast to the widely used Au-Ni-Ge contacts. The metal sequence during deposition is found to be a critical factor in determining the electrical contact properties and the dispersion of the oxide layer on the semiconductor surface after chemical cleaning. Ge doping of the GaAs beneath the contact layer was observed by SIMS, and a tunneling mechanism through the N/sup +/GaAs:Ge layer was proposed to explain the ohmic properties of the contacts. 12 refs., 7 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); California Univ., Berkeley (USA). Dept. of Materials Science and Mineral Engineering; Air Force Wright Aeronautical Labs., Wright-Patterson AFB, OH (USA). Materials Lab.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6943870
- Report Number(s):
- LBL-25113; CONF-880408-41; ON: DE89002918
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALLOYS
ALUMINIUM ALLOYS
ALUMINIUM BASE ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
AUGER ELECTRON SPECTROSCOPY
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SPECTROSCOPY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM ALLOYS
MATERIALS
MICROSCOPY
NICKEL ALLOYS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY