Solid phase epitaxy of stressed and stress-relaxed Ge-Si alloys
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
Solid phase epitaxy of 3500-A-thick Ge{sub {ital x}}Si{sub 1{minus}}{sub {ital x}} (0.04{le}{ital x}{le}0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475--575 {degree}C. The regrowth rates of stressed alloys were less than those of pure Si, while stress-relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation-strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation-strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz {ital et} {ital al}. For low Ge concentrations ({ital x}{lt}0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge{sub 0.1}Si{sub 0.9} alloy after complete recrystallization. During the regrowth at 550 {degree}C, the Ge-Si alloy first regrew coherently up to 300 A, above which threading dislocations started to nucleate. On the other hand, no dislocations were detected in the regrown layer of a stress-relaxed Ge{sub 0.1}Si{sub 0.9} alloy sample.
- DOE Contract Number:
- FG03-84ER45156
- OSTI ID:
- 7207173
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 71:4; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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