Type conversion in electron-irradiated GaAs

Journal Article · Sat Mar 31 23:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326177· OSTI ID:6296607

Farmer, J W; Look, D C

The unambiguous type conversion of GaAs by electron irradiation is reported here for the first time. Several high-quality n-type vapor-phase epitaxial layers (rhoapprox. =3 ..cap omega.. cm and ..mu..approx. =7000 cm/sup 2//V sec at 300 K) were converted by 1-MeV electrons to high-quality p-type layers (rhoapprox. =30 ..cap omega.. cm and ..mu..approx. =400 cm/sup 2//V sec). Temperature-dependent Hall-effect data show energy levels at 0.5, 0.3, and about 0.1 eV above the valence band. Evidence is presented to indicate that the failure of some of our samples (and, perhaps, other samples reported in the literature) to convert to low-resistivity p type is due to a rather high concentration of as-grown deep levels which pin the Fermi level near midgap.

• Research Organization: Physics Department, University of Dayton, Dayton, Ohio 45469
• OSTI ID: 6296607
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON BEAMS
ENERGY LEVELS
FERMI LEVEL
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
IRRADIATION
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
TEMPERATURE DEPENDENCE